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CHA3513 Datasheet Gaas Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

Overview: CHA3513 RoHS PLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave.

General Description

The CHA3513 is posed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Key Features

  • Performances: 6-18GHz.
  • 20dBm saturated output power.
  • 19 dB gain.
  • 3 bit attenuator for 26dB range.
  • DC power consumption, 300mA @ 4.5V.
  • Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 19 dB Psat Saturated Output power @ Attenuator state 0dB 20 dBm ATT dyn Attenuator range with 3bit 25 dB.

More Datasheets from United Monolithic Semiconductors

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CHA3514-99F 4-bit Digital Variable Amplifier
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CHA3513 Distributor